Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
Zhu Qing1, 2, Ma Xiao-Hua1, 2, †, , Chen Wei-Wei1, 2, Hou Bin1, 2, Zhu Jie-Jie1, 2, Zhang Meng1, 2, Chen Li-Xiang1, 2, Cao Yan-Rong3, Hao Yue2
       

Schematic illustrations of the response of the depletion layers: (a)–(d) the responses of the depletion layer at the times of t1, t2, t3, and t4, respectively, and (e) time dependences of voltage and capacitance.