Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
Zhu Qing1, 2, Ma Xiao-Hua1, 2, †, , Chen Wei-Wei1, 2, Hou Bin1, 2, Zhu Jie-Jie1, 2, Zhang Meng1, 2, Chen Li-Xiang1, 2, Cao Yan-Rong3, Hao Yue2
       

(a) DLTS spectrum with a rate window e = 133 s−1 and Arrhenius plots (inset) with Vr = − 3 V, Vf = − 2 V, and pulse width = 0.1 ms. (b) Pulse width dependence of the transient capacitance amplitude at 300 K with Vr = − 3 V and Vf = − 2 V.