Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Zhu Qing^{1, 2}, Ma Xiao-Hua^{1, 2, †,}, Chen Wei-Wei^{1, 2}, Hou Bin^{1, 2}, Zhu Jie-Jie^{1, 2}, Zhang Meng^{1, 2}, Chen Li-Xiang^{1, 2}, Cao Yan-Rong³, Hao Yue²

(a) DLTS spectrum with a rate window e = 133 s⁻¹ and Arrhenius plots (inset) with V_r = − 3 V, V_f = − 2 V, and pulse width = 0.1 ms. (b) Pulse width dependence of the transient capacitance amplitude at 300 K with V_r = − 3 V and V_f = − 2 V.