Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
Zhu Qing1, 2, Ma Xiao-Hua1, 2, †, 
, Chen Wei-Wei1, 2, Hou Bin1, 2, Zhu Jie-Jie1, 2, Zhang Meng1, 2, Chen Li-Xiang1, 2, Cao Yan-Rong3, Hao Yue2
, Chen Wei-Wei1, 2, Hou Bin1, 2, Zhu Jie-Jie1, 2, Zhang Meng1, 2, Chen Li-Xiang1, 2, Cao Yan-Rong3, Hao Yue2 Dimensional layout of fabricated Schottky diode incross-sectional (a) and top view (b).
