Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes
Dakhlaoui H†, 
, Almansour S
, Almansour S Schematic diagram of the device structure for GaN-based RTD.
Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes |
|
Dakhlaoui H†,
, Almansour S |
Schematic diagram of the device structure for GaN-based RTD. |
| |