Modulation of physical properties of oxide thin films by multiple fields

Yang Hua-Li^{1, 2}, Wang Bao-Min^{1, 2, †,}, Zhu Xiao-Jian^{1, 2}, Shang Jie^{1, 2}, Chen Bin^{1, 2}, Li Run-Wei^{1, 2, ‡,}

(a) Electronic phase diagram of LSMO with varying x = Mn⁴⁺/(Mn³⁺ + Mn⁴⁺) ratio. The half-filled triangle, circle, and square denote the positions of samples on STO with initial x = 0.54, 0.41, and 0.20 in phase diagram, respectively. The sample positions after applying positive and negative V_G are marked by corresponding filled and empty symbols. The abbreviations stand for spin-canted insulating (CI), ferromagnetic insulating (FI), ferromagnetic metal (FM), antiferromagnetic metal (AFM), and antiferromagnetic insulating (AFI) phase, respectively. The dependence of K_U (left axis) and −A_XLD (right axis) on V_G for the case of (b) tensile and (c) compressive strain.^[155] The unit 1 erg = 10⁻⁷ J.