Modulation of physical properties of oxide thin films by multiple fields

Yang Hua-Li^{1, 2}, Wang Bao-Min^{1, 2, †,}, Zhu Xiao-Jian^{1, 2}, Shang Jie^{1, 2}, Chen Bin^{1, 2}, Li Run-Wei^{1, 2, ‡,}

(a) Schematic of a sandwiched Nb/ZnO/Pt structure. (b) Typical bipolar RS behaviors observed in the device. (c) Measured conductance as a function of the bias voltage during the set process. Inset: Corresponding I–V curve in a larger voltage range from 0 V to 4 V. (d) Histogram of the conductance changes ΔG obtained from the forming and set processes.^[35]