Modulation of physical properties of oxide thin films by multiple fields
Yang Hua-Li1, 2, Wang Bao-Min1, 2, †, 
, Zhu Xiao-Jian1, 2, Shang Jie1, 2, Chen Bin1, 2, Li Run-Wei1, 2, ‡,
, Zhu Xiao-Jian1, 2, Shang Jie1, 2, Chen Bin1, 2, Li Run-Wei1, 2, ‡, A: Remnant current hysteresis switching loops. The measurement was taken under different UV illumination conditions. For the 2.5-mW/cm2 irradiance case, the behavior was attributed to the trapped charges. B: Data retention capability in dark conditions and under illumination with UV light (a), and IR light (b) in a metal/Al2O3/SiO2/Si structure. The voltage-pulses applied are displayed in the lower part of the figures.[
