Modulation of physical properties of oxide thin films by multiple fields

Yang Hua-Li^{1, 2}, Wang Bao-Min^{1, 2, †,}, Zhu Xiao-Jian^{1, 2}, Shang Jie^{1, 2}, Chen Bin^{1, 2}, Li Run-Wei^{1, 2, ‡,}

(a) The I–V characteristic of an Ag(30 nm)/Co(10 nm)/CoO–ZnO(2 nm)/Co(30 nm)/Ag(60 nm) junction with area 0.1 mm 30.1 mm, and (b) the tunneling magnetoresistance of the junction. The inset in panel (b) shows the R–H curve of the low resistance state. Schematics of the migration of oxygen ions between very thin CoO and ZnO layers under a positive voltage, and the resulting MIT of CoO_1−x in Co/CoO–ZnO/Co junctions.^[240]