Modulation of physical properties of oxide thin films by multiple fields

Yang Hua-Li^{1, 2}, Wang Bao-Min^{1, 2, †,}, Zhu Xiao-Jian^{1, 2}, Shang Jie^{1, 2}, Chen Bin^{1, 2}, Li Run-Wei^{1, 2, ‡,}

(a) Schematic of flexible RRAM device with a Cu/WO₃·H₂O/ITO-PET configuration. (b) Current versus voltage (I–V) curves of the ultrathin WO₃·H₂O nanosheets-based and bulk-based RRAM devices at initial cycle. The arrows and numbers indicate the voltage sweep directions. (c) Comparison of the performance of the RRAM device based on ultrathin WO₃·H₂O nanosheets with other reported typical RS inorganic materials. (d) I–V curves obtained from the WO₃·H₂O nanosheets-based and bulk-based RRAM devices after 2000 and 100 bending tests, respectively. Inset is a digital photograph of a bent RRAM device.^[212]