High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
He Ze-Zhao1, 2, Yang Ke-Wu1, 2, Yu Cui2, Liu Qing-Bin2, Wang Jing-Jing2, Li Jia2, Lu Wei-Li2, Feng Zhi-Hong2, †, , Cai Shu-Jun2
       

(a) and (b) Temperature-dependent IDS–VDS characteristics of a GFET. (c) Temperature-dependent IDS–VG and gm at VDS = − 2 V. (d) The calculated value of θ as a function of VG for GFET. Inset shows the gate voltage dependence of Fermi level (EF) of graphene.