High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
He Ze-Zhao1, 2, Yang Ke-Wu1, 2, Yu Cui2, Liu Qing-Bin2, Wang Jing-Jing2, Li Jia2, Lu Wei-Li2, Feng Zhi-Hong2, †, , Cai Shu-Jun2
       

(a) Raman spectrum of bilayer epitaxial graphene on 4H–SiC (0001). An inset shows the AFM image of bilayer graphene on SiC with a smooth terrace width of about 19 μm. The scanning area is 30 μm × 30 μm. (b) A schematic drawing of top-gated GFET. (c) Optical micrograph of top-gated GFET. The gate length (Lg) and gate width (Wg) are 1.2 μm and 2 μm, respectively. The scale bar is 10 μm.