Numerical simulation study of organic nonvolatile memory with polysilicon floating gate
Yan Zhao-wen, Wang Jiao, Qiao Jian-li, Chen Wen-jie, Yang Pan, Xiao Tong, Yang Jian-hong†,
       

(a) Switching behavior for the ONFGM device with poly-Si floating gate (E: erase, P: program, ROn: read-on state, and ROff: read-off state), and (b) the drain currents of ON state and OFF state after erase and program.