Effects of grinding-induced grain boundary and interfaces on electrical transportation and structure phase transition in ZnSe under high pressure
Yang Jie1, 2, Wang Pei1, 2, Zhang Guo-Zhao2, Zhou Xiao-Xue2, Li Jing3, †, 
, Liu Cai-Long2, ‡,
, Liu Cai-Long2, ‡, Pressure dependent grain boundary resistances of ZnSe samples with different grain sizes. The red solid circle denotes an average size of 478 nm, and the black solid square denotes an average size of 859 nm.
