Properties of n-Ge epilayer on Si substrate with
Huang Shi-Hao1, †, 
, Li Cheng2, Chen Cheng-Zhao3, Wang Chen2, Xie Wen-Ming1, Lin Shu-Yi1, Shao Ming1, Nie Ming-Xing1, Chen Cai-Yun1
, Li Cheng2, Chen Cheng-Zhao3, Wang Chen2, Xie Wen-Ming1, Lin Shu-Yi1, Shao Ming1, Nie Ming-Xing1, Chen Cai-Yun1 Simulation of the spontaneous emission spectra of the direct band transition in Ge for various doping concentrations.
