Properties of n-Ge epilayer on Si substrate with <italic>in-situ</italic> doping technology

Properties of n-Ge epilayer on Si substrate with in-situ doping technology

Huang Shi-Hao^{1, †,}, Li Cheng², Chen Cheng-Zhao³, Wang Chen², Xie Wen-Ming¹, Lin Shu-Yi¹, Shao Ming¹, Nie Ming-Xing¹, Chen Cai-Yun¹

Typical ω–2θ symmetric (0 0 4) XRD scans of the n-Ge epilayer and Ge VS. The straight dotted line indicates the theoretical peak position of bulk Ge.