Properties of n-Ge epilayer on Si substrate with
Huang Shi-Hao1, †, 
, Li Cheng2, Chen Cheng-Zhao3, Wang Chen2, Xie Wen-Ming1, Lin Shu-Yi1, Shao Ming1, Nie Ming-Xing1, Chen Cai-Yun1
, Li Cheng2, Chen Cheng-Zhao3, Wang Chen2, Xie Wen-Ming1, Lin Shu-Yi1, Shao Ming1, Nie Ming-Xing1, Chen Cai-Yun1 Plots of doping concentration in n-Ge epilayers versus PH3-to-GeH4 flow ratio at growth temperatures of 450 °C, 500 °C, and 630 °C.
