Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption

Gao Zhi-Yuan^†,, Xue Xiao-Wei, Li Jiang-Jiang, Wang Xun, Xing Yan-Hui, Cui Bi-Feng, Zou De-Shu

Plots of surface pit and density values together with the (0002) plane FWHM of XRD-scan in Table 1 versus growth V/III atom ratio and temperature. (a) Pit density as a function of growth V/III atom ratio, (b) pit size as a function of V/III atom ratio, (c) pit density as a function of temperature, (d) pit size as a function of temperature, (e) (0002) FWHM as a function of V/III atom ratio, and (f) (0002) FWHM as a function of temperature.