Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption
Gao Zhi-Yuan†, , Xue Xiao-Wei, Li Jiang-Jiang, Wang Xun, Xing Yan-Hui, Cui Bi-Feng, Zou De-Shu
       

(a) Schematic illustration of the surface pit formation in practice caused by screw type dislocation. When the dislocation core reaches a critical curvature, the spiral at the edge away from the center still keeps enlarging. (b) Schematic illustration of the pit profile. The dashed line is constructed according to Eq. (2), and the solid line is the profile when the edge and the center are in the same equilibrium state.