Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption
Gao Zhi-Yuan†, , Xue Xiao-Wei, Li Jiang-Jiang, Wang Xun, Xing Yan-Hui, Cui Bi-Feng, Zou De-Shu
       

(a) Schematic illustration of the surface pit formation caused by screw type dislocation as theoretically predicted by the Frank model. (b) SEM image of the hexagonal surface pit in c-plane GaN. The spiral steps on the pit facets could be seen.