High-speed waveguide-integrated Ge/Si avalanche photodetector
Cong Hui, Xue Chunlai†, 
, Liu Zhi, Li Chuanbo, Cheng Buwen, Wang Qiming
, Liu Zhi, Li Chuanbo, Cheng Buwen, Wang Qiming (a) RF response for APD with 10-μm-length Ge layer at reverse bias of 6 V, 8 V, 10 V, 18 V, and 19 V; (b) 3-dB-bandwidth versus bias voltage for devices with different lengths of Ge layer.
