A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Li Ou-Peng^{1, †,}, Zhang Yong¹, Xu Rui-Min¹, Cheng Wei², Wang Yuan², Niu Bing², Lu Hai-Yan²

Simulated (green line) and measured (red line) MSG&MAG of 0.5-μm emitter length InGaAs/InP DHBT. Measurements are carried out in three bands: 200 MHz–67 GHz, 75 GHz–110 GHz, and 140 GHz–220 GHz. Here, V_c = 1.5 V and I_b = 100–500 μA in steps of 100 μA.