Influences of different structures on the characteristics of H2O-based and O3-based La<italic>x</italic>Al<italic>y</italic>O films deposited by atomic layer deposition

Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition

Fei Chen-Xi, Liu Hong-Xia^†,, Wang Xing, Zhao Dong-Dong, Wang Shu-Long, Chen Shu-Peng

Dielectric constant and EOT of La_xAl_yO films deposited with different oxidants: (a) H₂O, (b) O₃.