Temperature dependent direct-bandgap light emission and optical gain of Ge
Liu Zhi, He Chao, Zhang Dongliang, Li Chuanbo, Xue Chunlai, Zuo Yuhua, Cheng Buwen
       

Temperature-dependent photoluminescence intensity and calculational light emission intensity of three 0.21% tensile strained n-doped Ge films on Si from 253 K to 353 K. The injected carrier density is estimated to be about 1 × 1019 cm−3.