Temperature dependent direct-bandgap light emission and optical gain of Ge
Liu Zhi, He Chao, Zhang Dongliang, Li Chuanbo, Xue Chunlai, Zuo Yuhua, Cheng Buwen
       

Electron densities in the Γ valley of different tensile strained, n-doped Ge samples at different temperatures. The input carrier concentration n = p = 1 × 1019 cm− 3.