Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot

Jbara Ahmed S^{1, 2, 3}, Othaman Zulkafli^{1, 3, †,}, Saeed M A³

The absorption coefficient from interband and intraband transitions as a function of photon energy for In_xGa_1−xN / GaN strained structure with 30 nm base diameter, 2 nm QD height and WL, at optical intensity of 15 MW/m².