Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot
Jbara Ahmed S1, 2, 3, Othaman Zulkafli1, 3, †, 
, Saeed M A3
, Saeed M A3 Cross section of s- and p-states for In0.6Ga0.4N/GaN envelope function with 3 nm QD height, 2 nm WL, and different base diameters: (a) 10 nm, (b) 20 nm, and (c) 30 nm.
