Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot
Jbara Ahmed S1, 2, 3, Othaman Zulkafli1, 3, †, 
, Saeed M A3
, Saeed M A3 The absorption coefficient from interband and intraband transitions as a function of photon energy for In0.6Ga0.4N/GaN strained structure with 2 nm QD height, 30 nm base diameter, and 2 nm WL, at four values of optical intensity: (a) 5 MW/m2, (b) 10 MW/m2, (c) 15 MW/m2, and (d) 20 MW/m2.
