Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC
Liang Feng1, Chen Ping1, †, 
, Zhao De-Gang1, Jiang De-Sheng1, Zhao Zhi-Juan2, Liu Zong-Shun1, Zhu Jian-Jun1, Yang Jing1, Liu Wei1, He Xiao-Guang1, Li Xiao-Jing1, Li Xiang1, Liu Shuang-Tao1, Yang Hui3, Zhang Li-Qun3, Liu Jian-Ping3, Zhang Yuan-Tao4, Du Guo-Tong4
, Zhao De-Gang1, Jiang De-Sheng1, Zhao Zhi-Juan2, Liu Zong-Shun1, Zhu Jian-Jun1, Yang Jing1, Liu Wei1, He Xiao-Guang1, Li Xiao-Jing1, Li Xiang1, Liu Shuang-Tao1, Yang Hui3, Zhang Li-Qun3, Liu Jian-Ping3, Zhang Yuan-Tao4, Du Guo-Tong4 The UV photoemission spectra of AlN films grown on n-type 6H–SiC. The inelastic secondary electron cutoff and the valence band maximum are marked as SECO and VBM, respectively.
