Distribution of electron traps in SiO2/HfO2 nMOSFET
Hou Xiao-Hui1, Zheng Xue-Feng2, †, 
, Wang Ao-Chen2, Wang Ying-Zhe2, Wen Hao-Yu2, Liu Zhi-Jing1, Li Xiao-Wei2, Wu Yin-He2
, Wang Ao-Chen2, Wang Ying-Zhe2, Wen Hao-Yu2, Liu Zhi-Jing1, Li Xiao-Wei2, Wu Yin-He2 (a) The energy distribution of electron traps and (b) charge-pumping curves before and after electrical stress, respectively. The electrical stress is of 3.0 V for 100 s and the maximum discharge time is 100 ks.
