Distribution of electron traps in SiO<sub>2</sub>/HfO<sub>2</sub> nMOSFET

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Hou Xiao-Hui¹, Zheng Xue-Feng^{2, †,}, Wang Ao-Chen², Wang Ying-Zhe², Wen Hao-Yu², Liu Zhi-Jing¹, Li Xiao-Wei², Wu Yin-He²

(a) The ΔV_th versus discharge time and (b) dΔV_th/d log T_discharge versus discharge time at ΔE ∼ −1.0 eV and −1.43 eV, respectively. The charging bias is 2.1 V for 10 s. The maximum discharge time is 100 ks.