Distribution of electron traps in SiO<sub>2</sub>/HfO<sub>2</sub> nMOSFET

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Hou Xiao-Hui¹, Zheng Xue-Feng^{2, †,}, Wang Ao-Chen², Wang Ying-Zhe², Wen Hao-Yu², Liu Zhi-Jing¹, Li Xiao-Wei², Wu Yin-He²

(a)ΔV_th versus discharge time during the discharging period under different biases. The V_th is measured by pulsed I–V technique at pre-set interval. (b) The accumulative discharged electron trap density and trap density per electronvolt versus ΔE, respectively. The maximum discharge time is 100 ks.