Distribution of electron traps in SiO<sub>2</sub>/HfO<sub>2</sub> nMOSFET

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Hou Xiao-Hui¹, Zheng Xue-Feng^{2, †,}, Wang Ao-Chen², Wang Ying-Zhe², Wen Hao-Yu², Liu Zhi-Jing¹, Li Xiao-Wei², Wu Yin-He²

(a) The I_d–V_g curves measured by pulsed I–V technique with different charge time. (b) The shift of threshold voltage, ΔV_th, versus charge time before and after stress, respectively. The stress bias is of 2.1 V.