Distribution of electron traps in SiO<sub>2</sub>/HfO<sub>2</sub> nMOSFET

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Hou Xiao-Hui¹, Zheng Xue-Feng^{2, †,}, Wang Ao-Chen², Wang Ying-Zhe², Wen Hao-Yu², Liu Zhi-Jing¹, Li Xiao-Wei², Wu Yin-He²

The I_d–V_g curves measured by the DC I–V technique and pulsed I–V technique before and after stress on a fresh device, respectively. The stress is 2.1 V for 10 s.