Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

Wu Chen-Fei^{1, 2}, Chen Yun-Feng^{1, 2}, Lu Hai^{1, 2, †,}, Huang Xiao-Ming³, Ren Fang-Fang^{1, 2}, Chen Dun-Jun^{1, 2}, Zhang Rong^{1, 2}, Zheng You-Dou^{1, 2}

Distribution of channel resistance per unit length r of the TFT with V_DS = 5 V and V_GS increasing from 7 V to 15 V. The shaded regions illustrate the topographic edges of the S/D electrodes.