High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
Huang Wei1, †, 
, Lu Chao1, Yu Jue1, Wei Jiang-Bin1, Chen Chao-Wen1, Wang Jian-Yuan1, Xu Jian-Fang1, Wang Chen2, Li Cheng1, Chen Song-Yan1, Liu Chun-Li3, Lai Hong-Kai1
, Lu Chao1, Yu Jue1, Wei Jiang-Bin1, Chen Chao-Wen1, Wang Jian-Yuan1, Xu Jian-Fang1, Wang Chen2, Li Cheng1, Chen Song-Yan1, Liu Chun-Li3, Lai Hong-Kai1 P, Ni, and Ge distribution profiles measured by SIMS for (a) Ge(100) substrate after P+ implantation, (b) Ge n+/p junction after MIDA annealing at 350 °C for 30 min, and (c) Ge n+/p junction after RTA activation annealing at 550 °C for 15 s.
