Huang Wei 1, †, ![](http://cpb.iphy.ac.cn/html_resources/images/REemail.gif) , Lu Chao 1, Yu Jue 1, Wei Jiang-Bin 1, Chen Chao-Wen 1, Wang Jian-Yuan 1, Xu Jian-Fang 1, Wang Chen 2, Li Cheng 1, Chen Song-Yan 1, Liu Chun-Li 3, Lai Hong-Kai 1
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(a) Typical I–V curves for the MIDA Ge n+/p junctions annealed at 325 °C, 350 °C, 375 °C, and 400 °C; (b) typical I–V curves for the Ge n+/p junctions after high temperature activation annealing at 550 °C, 600 °C, and 650 °C. |