High-performance germanium n<sup>+</sup>/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

High-performance germanium n⁺/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Huang Wei^{1, †,}, Lu Chao¹, Yu Jue¹, Wei Jiang-Bin¹, Chen Chao-Wen¹, Wang Jian-Yuan¹, Xu Jian-Fang¹, Wang Chen², Li Cheng¹, Chen Song-Yan¹, Liu Chun-Li³, Lai Hong-Kai¹

(a) Typical I–V curves for the MIDA Ge n⁺/p junctions annealed at 325 °C, 350 °C, 375 °C, and 400 °C; (b) typical I–V curves for the Ge n⁺/p junctions after high temperature activation annealing at 550 °C, 600 °C, and 650 °C.