High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
Huang Wei1, †, 
, Lu Chao1, Yu Jue1, Wei Jiang-Bin1, Chen Chao-Wen1, Wang Jian-Yuan1, Xu Jian-Fang1, Wang Chen2, Li Cheng1, Chen Song-Yan1, Liu Chun-Li3, Lai Hong-Kai1
, Lu Chao1, Yu Jue1, Wei Jiang-Bin1, Chen Chao-Wen1, Wang Jian-Yuan1, Xu Jian-Fang1, Wang Chen2, Li Cheng1, Chen Song-Yan1, Liu Chun-Li3, Lai Hong-Kai1 Sheet resistance of the (25 nm)Ni/Ge(001) after annealing.
