Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

Lu Nianduan^{1, 2, †,}, Sun Pengxiao^{1, 2, †,}, Li Ling^{1, 2, ‡,}, Liu Qi^{1, 2}, Long Shibing^{1, 2}, Hangbing Lv^{1, 2}, Liu Ming^{1, 2}

(a) Schematic of the 1D1R crossbar array structure; (b) the unit cell composed of a RRAMdevice and a diode connected in series; (c) the unit cell added the electrode component based on the unit cell component in panel (b); and (d) schematic diagram of typical DC I–V characteristic of a 1D1R cell. In the present work, voltage is applied to the electrode (WL/BL: word lines (WL), bit lines (BL)) that is connected with RRAM cell while keeping the opposite electrode ground for the reset operation.