Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process
Yu Jun-Ting1, Chen Shu-Ming1, 2, †, 
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1 Hole currents of drain and source terminating in the passive p-FinFET for different body-biasing voltages at 0.2 V (FBB = 0.2 V, RBB = −0.2 V). The ion LET is 20 MeV·cm2/mg.
