Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process
Yu Jun-Ting1, Chen Shu-Ming1, 2, †, 
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1 Hole current flowing in the passive p-FinFET for different body-biasing voltages at 20 ps after ion strike: (a) RBB; (b) FBB.
