Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process
Yu Jun-Ting1, Chen Shu-Ming1, 2, †, 
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1 Variations of SET pulse width at FWHR captured in active and passive devices with body-biasing for three supply voltages (0.8 V, 0.9 V, and 1.0 V). All simulations are conducted with the same ion LET at 20 MeV·cm2/mg.
