Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process
Yu Jun-Ting1, Chen Shu-Ming1, 2, †, 
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1
, Chen Jian-Jun1, Huang Peng-Cheng1, Song Rui-Qiang1 (a) 3D TCAD model of the two bulk p-FinFETs in the dual-well process, (b) a zoomed view of the hit p-FinFET and the adjacent p-FinFET.
