Comparison of blue–green response between transmission-mode GaAsP- and GaAs-based photocathodes grown by molecular beam epitaxy

Jiao Gang-Cheng^{1, 2, †,}, Liu Zheng-Tang¹, Guo Hui², Zhang Yi-Jun³

Schematic band structures and surface barriers of the GaAsP and GaAs photocathode. E_V is the valence band maximum, E_F is the Fermi level, E_C1 and E_C2 are the conduction-band minima of GaAsP and GaAs respectively, and E₀₁ and E₀₂ are the vacuum levels of GaAsP and GaAs respectively.