Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
Liu Yang1, †, 
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2 Distributions of electric field at (a) 0.25 ns and (b) 0.75 ns.
