Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
Liu Yang1, †, 
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2 Variation of maximum temperature within device with time.
