Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xi Xiao-Wen1, †, 
, Chai Chang-Chun1, Zhao Gang2, Yang Yin-Tang1, Yu Xin-Hai1, Liu Yang1
, Chai Chang-Chun1, Zhao Gang2, Yang Yin-Tang1, Yu Xin-Hai1, Liu Yang1 Distributions of the device parameters under 10-V injection voltage: (a) electric field (V/cm), (b) current density (A/cm2), and (c) temperature (K).
