Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xi Xiao-Wen1, †, , Chai Chang-Chun1, Zhao Gang2, Yang Yin-Tang1, Yu Xin-Hai1, Liu Yang1
       

Distributions of the electric field (V/cm) at various times: (a) t = 0.4 ns, (b) t = 0.8 ns, (c) t = 1.4 ns, and (d) t = 2.34 ns.