Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

Ma Da¹, Luo Xiao-Rong^{1, 2, †,}, Wei Jie¹, Tan Qiao¹, Zhou Kun¹, Wu Jun-Feng¹

(a) Schematic cross-sectional view of the proposed CEA-VDMOS, (b) accumulation effect in on-state (V_GS > V_th, V_GD > 0, V_DS > 0), (c) assisted-depletion effect on the n-pillar in the off-state, and (d) schematic cross-sectional view of the CSJ-VDMOS.