Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model
Sun Ya-Bin1, Fu Jun2, †, 
, Wang Yu-Dong2, Zhou Wei2, Zhang Wei2, Liu Zhi-Hong2
, Wang Yu-Dong2, Zhou Wei2, Zhang Wei2, Liu Zhi-Hong2 Temperature dependences of zero-bias capacitance and built-in voltage for BE junction.
