Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model
Sun Ya-Bin1, Fu Jun2, †, , Wang Yu-Dong2, Zhou Wei2, Zhang Wei2, Liu Zhi-Hong2
       

Plots of RB and RCX versus Cbcx for 4 × 1.2 × 20 μm2 SiGe HBT in cut-off state.